Substrate processing apparatus

ABSTRACT

A substrate processing apparatus capable of processing a thin film to have improved quality through uniform exhaustion includes: a substrate supporting unit; a processing unit on the substrate supporting unit; an exhaust unit connected to a reaction space between the substrate supporting unit and the processing unit; an exhaust port connected to at least a portion of the exhaust unit; and a flow control unit disposed in an exhaust channel from a space inside the exhaust unit to the exhaust port.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the benefit of U.S. Patent Application No. 62/896,551, filed on Sep. 5, 2019, in the U.S. Patent and Trademark Office, the disclosure of which is incorporated herein in its entirety by reference.

BACKGROUND 1. Field

One or more embodiments relate to a substrate processing apparatus, and more particularly, to a substrate processing apparatus having an improved exhaust structure.

2. Description of Related Art

Throughput per hour is an important factor in the production of semiconductor devices, together with precise control of thin films. A single wafer substrate processing apparatus is advantageous for individual precision control of a thin film, and a batch substrate processing apparatus may process a large number of substrates at the same time.

In order to simultaneously achieve productivity improvement and precise control on individual substrates, a multiple reactor chamber having a plurality of individual reactors mounted thereon is used. In the multiple reactor chamber, gas is supplied to a reactor through the center of the top of each individual reactor, and the supplied gas is exhausted through the center of the top of the reactor or exhausted through the side of the reactor.

Meanwhile, in a structure of the multiple reactor chamber, in the case of a structure in which gas is exhausted from a portion of the reactor, a flow of gas is concentrated on the portion of the reactor, and thus a film profile is not uniform and is liable to be shifted to one side. In particular, when the exhaust structure is arranged asymmetrically, the thickness of a thin film on one side of a substrate and the thickness of a thin film on the other side the substrate are different, and uniformity of the thin film on the substrate is lowered.

SUMMARY

One or more embodiments include a substrate processing apparatus having an exhaust structure that allows characteristics of a thin film of a processed substrate to be uniform throughout the substrate.

Additional aspects will be set forth in part in the description which follows and, in part, will be apparent from the description, or may be learned by practice of the presented embodiments of the disclosure.

According to one or more embodiments, a substrate processing apparatus may include: a substrate supporting unit; a processing unit on the substrate supporting unit; an exhaust unit connected to a reaction space between the substrate supporting unit and the processing unit; an exhaust port connected to at least a portion of the exhaust unit; and a flow control unit disposed in an exhaust channel from a space inside the exhaust unit to the exhaust port.

According to an example of the substrate processing apparatus, the flow control unit may be adjacent to the exhaust port.

According to another example of the substrate processing apparatus, the exhaust unit may extend to form an exhaust space surrounding the reaction space, and the exhaust port may be disposed to communicate with a portion of the exhaust space.

According to another example of the substrate processing apparatus, the flow control unit may be configured to prevent a gas flow in the exhaust space from concentrating at the exhaust port.

According to another example of the substrate processing apparatus, the substrate processing apparatus may further include: a support configured to support the processing unit and the exhaust unit; and a guide unit on the support, wherein the flow control unit may be configured to be movable on the guide unit.

According to another example of the substrate processing apparatus, the support and the guide unit may be implemented as an integral structure.

According to another example of the substrate processing apparatus, at least one of the flow control unit and the guide unit may include a groove for preventing a separation between the flow control unit and the guide unit.

According to another example of the substrate processing apparatus, the exhaust unit may further include: a boundary wall defining a side portion of the reaction space; an external wall parallel to the partition wall; and a connecting wall extending to connect the boundary wall to the external wall. The connecting wall may provide a contact surface between the exhaust unit and the processing unit.

According to another example of the substrate processing apparatus, the flow control unit may include at least one through hole. At least a portion of the through hole may extend toward the exhaust port.

According to another example of the substrate processing apparatus, the through holes may be arranged in a plurality of layers.

According to another example of the substrate processing apparatus, the flow control unit may include a first surface facing the exhaust port and a second surface different from the first surface, and the through hole may extend through the first surface and the second surface.

According to another example of the substrate processing apparatus, a cross-sectional area of a first portion of the through hole may be different from a cross-sectional area of a second portion of the through hole.

According to another example of the substrate processing apparatus, the substrate processing apparatus may further include a force applying unit configured to generate force for moving the flow control unit.

According to another example of the substrate processing apparatus, the substrate processing apparatus may further include: a receiving unit for receiving the force applying unit; and a rolling unit between the force applying unit and the receiving unit.

According to another example of the substrate processing apparatus, the force for moving the flow control unit is magnetic force, and the force applying unit may include a magnetic force applying unit.

According to another example of the substrate processing apparatus, the magnetic force applying unit may include an electromagnet, and the substrate processing apparatus may further include a controller configured to control the electromagnet.

According to another example of the substrate processing apparatus, the controller may be configured to supply a current to the electromagnet during maintenance of the substrate processing apparatus, and to stop the supply of current to the electromagnet during processing of the substrate processing apparatus.

According to one or more embodiments, a substrate processing apparatus includes: a processing unit; an exhaust unit connected to a reaction space below the processing unit; and a flow control unit disposed in the exhaust unit and including at least one through hole.

According to an example of the substrate processing apparatus, the substrate processing apparatus may further include a force applying unit disposed apart from the flow control unit and configured to generate force for moving the flow control unit.

According to one or more embodiments, a substrate processing apparatus includes: an exhaust unit connected to a reaction space; an exhaust port connected to at least a portion of the exhaust unit; a flow control unit disposed in the exhaust unit and including at least one through hole; and a force applying unit configured to generate force for moving the flow control unit.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other aspects, features, and advantages of certain embodiments of the disclosure will be more apparent from the following description taken in conjunction with the accompanying drawings, in which:

FIGS. 1 and 2 are views of a substrate processing apparatus according to embodiments. FIG. 1 is a plan view of the substrate processing apparatus, and FIG. 2 is a cross-sectional view taken along line II-II′ of FIG. 1 .

FIG. 3 is a view of a portion of a substrate processing apparatus according to embodiments, excluding a lid and an exhaust port.

FIG. 4 is a view of the portion of the substrate processing apparatus of FIG. 3 viewed from a first direction, and FIG. 5 is a view of the portion of the substrate processing apparatus of FIG. 3 viewed from a second direction.

FIG. 6 is a view of a substrate processing apparatus according to some embodiments of the inventive concept.

FIGS. 7A-E illustrate views of various forms of a flow control unit and through holes included in the flow control unit.

FIG. 8 is a plan view of a substrate processing apparatus according to some embodiments.

FIG. 9 is a cross-sectional view taken along line A-A′ of FIG. 8 .

FIGS. 10 to 12 are views of a substrate processing apparatus according to some embodiments of the inventive concept.

FIG. 13 is a view of a substrate processing apparatus according to some embodiments of the inventive concept.

DETAILED DESCRIPTION

Reference will now be made in detail to embodiments, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to like elements throughout. In this regard, the present embodiments may have different forms and should not be construed as being limited to the descriptions set forth herein. Accordingly, the embodiments are merely described below, by referring to the figures, to explain aspects of the present description. As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items. Expressions such as “at least one of,” when preceding a list of elements, modify the entire list of elements and do not modify the individual elements of the list.

The terminology used herein is for the purpose of describing particular embodiments and is not intended to limit the disclosure. As used herein, the singular forms “a”, “an”, and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “includes”, “comprises” and/or “including”, “comprising” used herein specify the presence of stated features, integers, steps, processes, members, components, and/or groups thereof, but do not preclude the presence or addition of one or more other features, integers, steps, processes, members, components, and/or groups thereof. As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items.

It will be understood that, although the terms first, second, etc. may be used herein to describe various members, components, regions, layers, and/or sections, these members, components, regions, layers, and/or sections should not be limited by these terms. These terms do not denote any order, quantity, or importance, but rather are only used to distinguish one component, region, layer, and/or section from another component, region, layer, and/or section. Thus, a first member, component, region, layer, or section discussed below could be termed a second member, component, region, layer, or section without departing from the teachings of embodiments.

Embodiments of the disclosure will be described hereinafter with reference to the drawings in which embodiments of the disclosure are schematically illustrated. In the drawings, variations from the illustrated shapes may be expected as a result of, for example, manufacturing techniques and/or tolerances. Thus, the embodiments of the present disclosure should not be construed as being limited to the particular shapes of regions illustrated herein but may include deviations in shapes that result, for example, from manufacturing processes.

FIGS. 1 and 2 are views of a substrate processing apparatus according to embodiments. FIG. 1 is a plan view of the substrate processing apparatus, and FIG. 2 is a cross-sectional view taken along line II-II′ of FIG. 1 .

Referring to FIGS. 1 and 2 , the substrate processing apparatus may include a partition wall 100, a processing unit 110, an exhaust unit 120, an exhaust port 130, a flow control unit 140, a substrate supporting unit 150, and a force applying unit 160. The substrate processing apparatus may include a reaction space 51 and an exhaust space 55 connected to the reaction space 51. The exhaust space 55 may be formed so as to surround the reaction space 51.

The partition wall 100 is a chamber for receiving the substrate supporting unit 150, and may also be referred to as a chamber. In an embodiment, a reactor including the reaction space 51 is referred to as an inner chamber, and the entire structure of the substrate processing apparatus surrounding a plurality of reactors (e.g., four reactors) may be referred to as an outer chamber. An exhaust line 18 may be provided in the partition wall 100. In some embodiments, the exhaust line 18 may be formed to extend along the inside of a side wall of the partition wall 100. In an embodiment, the substrate processing apparatus includes a first surface and a second surface adjacent the first surface, and the exhaust line 18 may extend along a corner between the first surface and the second surface. In additional embodiments, the exhaust line 18 may be formed to extend along the inside of a lower wall of the partition wall 100.

The processing unit 110 may be located on the substrate supporting unit 150 configured to support a substrate. The reaction space 51 may be defined between the substrate supporting unit 150 and the processing unit 110. The processing unit 110 may serve as a first lid that defines an upper surface of the reaction space 51. In other words, the first lid on the substrate supporting unit 150 may include at least one processing unit 110.

The processing unit 110 may include members that perform appropriate functions depending on a function of the substrate processing apparatus. For example, when a substrate processing apparatus performs a deposition function, the processing unit 110 may include a reactant supplier (e.g., a showerhead assembly). In another embodiment, when the reactor performs a polishing function, the processing unit 110 may include a polishing pad.

The processing unit 110 may be a conductor and may be used as an electrode for generating a plasma. That is, the processing unit 110 itself may serve as one electrode for generating plasma. The processing unit 110 in this manner (the manner in which the processing unit 110 itself is used as an electrode) is hereinafter referred to as a gas supply electrode.

The substrate supporting unit 150 may be configured to provide an area where an object to be processed (not shown) such as a semiconductor or a display substrate is seated. The substrate supporting unit 150 may be supported by a support (not shown) capable of up and down and rotational movement. Further, the substrate supporting unit 150 may be a conductor and may be used as an electrode for generating plasma (i.e., an opposite electrode of a gas supply electrode).

The exhaust unit 120 may be located between the processing unit 110 and a support TLD. The exhaust unit 120 may extend to surround the reaction space 51. The exhaust unit 120 may be implemented with a non-conductive material, for example, an insulator. On the other hand, the support TLD may be implemented with a conductive material, for example, a conductor.

In an embodiment, the exhaust unit 120 may serve as a second lid that defines a side surface of the reaction space 51. The second lid including the exhaust unit 120 may include the exhaust space 55 connected to the reaction space 51. Therefore, the exhaust unit 120 may provide the exhaust space 55. Further, the exhaust unit 120 may provide a space in which the processing unit 110 is received. When the processing unit 110 is received in the space, the processing unit 110 may be in contact with the exhaust unit 120.

The exhaust unit 120 may include a partition wall W between the reaction space 51 and the exhaust space 55. A first surface (e.g., an outer surface) of the boundary wall W may define the reaction space 51 and a second surface of the boundary wall W (i.e., an inner surface as a surface facing the first surface) may define the exhaust space 55. For example, the reaction space 51 may be defined by the first surface side of the boundary wall W, an upper surface of the substrate supporting unit 150, and a lower surface of the processing unit 110 which is the first lid. In other words, a side of the reaction space 51 may be defined by the boundary wall W of the exhaust unit 120.

The exhaust unit 120 may provide a portion of a space for the object to be processed. For example, when the substrate processing apparatus performs a deposition function, the reaction space 51 for deposition may be defined by the exhaust unit 120. Further, the exhaust space 55 may be defined inside the exhaust unit 120.

In an example, the exhaust unit 120 may include a connecting wall C and an external wall O extending from the boundary wall W. The external wall O of the exhaust unit 120 is disposed in parallel with the boundary wall W and may contact the support TLD. The connecting wall C of the exhaust unit 120 may extend to connect the boundary wall W to the external wall O. The connecting wall C may provide a contact surface with the processing unit 110. The processing unit 110, which is the first lid, and the exhaust unit 120, which is the second lid, may be in contact with each other by the contact surface.

The flow control unit 140 in the exhaust unit 120 may be disposed so as to be apart from the boundary wall W, the connecting wall C, and the external wall O. For example, the flow control unit 140 and the connecting wall C may be spaced apart from each other by a distance a, and the flow control unit 140 and the external wall O may be spaced apart from each other by a distance b.

By disposing the flow control unit 140, an exhaust pressure difference between a surface of the flow control unit 140 facing the reaction space 51 and a surface facing the exhaust port 130 may be generated. This exhaust pressure difference may determine exhaust velocity and/or exhaust resistance of gas toward the flow control unit 140. The exhaust velocity and/or the exhaust resistance may be affected by the above-described distances a and b, shape and arrangement structure of a through hole TH of the flow control unit 140, and the like.

The support TLD may contact the exhaust unit 120 to support the processing unit 110 and the exhaust unit 120. The support TLD may be supported by the partition wall 100. As described above, the support TLD may serve as a top lid which is supported by the partition wall 100 to cover an outer chamber while supporting the processing unit 110 as the first lid and the exhaust unit 120 as the second lid.

The support TLD may be between the partition wall 100 and the exhaust port 130. The support TLD may include a path P connecting the exhaust port 130 to the exhaust line 18 of the partition wall 100. In an embodiment, a cross-sectional area of the path P and a cross-sectional area of the exhaust line 18 may be substantially the same. For example, when the path P and the exhaust line 18 are formed in a circular shape, a diameter of the path P may be the same as that of the exhaust line 18. In additional embodiments, a sealing member (not shown) may be between the support TLD and the partition wall. The sealing member may extend around the path P or the exhaust line 18, thereby preventing leakage of gas moving from the path P to the exhaust line 18.

The support TLD may be between the partition wall 100 and a lid (e.g., the second lid including the exhaust unit 120). A flow control ring FCR may be on the support TLD. Further, the flow control ring FCR may be between the support TLD and the substrate supporting unit 150. The flow control ring FCR may be slidably on the support TLD. The flow control ring FCR may be spaced apart from the substrate supporting unit 150 to form a gap G and a pressure balance between the reaction space 51 and an inner space of the outer chamber may be controlled by adjusting the gap G.

In order to achieve the above-described pressure balance, filling gas may be introduced from a lower space below the support TLD and the substrate supporting unit 150 toward the reaction space 51. According to the introduction of the filling gas, a gas curtain may be formed in the gap G between the substrate supporting unit 150 and the flow control ring FCR. Due to the gas curtain, gas in the reaction space 51 may be prevented from flowing into the lower space.

In an embodiment, the filling gas may be different from gas supplied through the processing unit 110. For example, the filling gas may be inert gas such as nitrogen or argon. In some embodiments, the filling gas may have a discharge rate that is lower than a discharge rate of gas supplied to the reaction space 51 through the processing unit 110. When plasma is generated in the reaction space 51, the filling gas with the lower discharge rate may prevent generation of parasitic plasma in the lower space below the support TLD and the substrate supporting unit 150. The partition wall W may provide an interval E connecting the reaction space 51 to the exhaust space 55. For example, the interval E may be formed between the exhaust unit 120 and the flow control ring FCR. The gap E may be a channel between the reaction space 51 and the exhaust space 55. Therefore, the reaction space 51 and the exhaust space 55 may communicate with each other through the channel.

Under such a structure, gas in the reaction space 51 is exhausted laterally through the exhaust space 55. That is, the gas in the reaction space 51 may be exhausted through the exhaust space 55, an opening OP, a channel in the exhaust port 130, the path P of the support TLD, and the exhaust line 18 of the partition wall 100.

A portion of the exhaust unit 120, which is the second lid, may communicate with the exhaust port 130. The exhaust port 130 may be connected to at least a portion of the exhaust unit 120. For example, the exhaust port 130 may be disposed to communicate with a portion of a periphery of the exhaust unit 120. Therefore, gas in a portion of the exhaust space 55 may be exhausted through the exhaust port 130.

In more detail, gas supplied to the center of the reaction space 51 through the processing unit 110 may be dispersed radially. Thus, the radially dispersed gas may move toward the exhaust space 55 of the exhaust unit 120. Since the exhaust port 130 is connected to a portion of the periphery of the exhaust unit 120, the radially dispersed gas toward the exhaust space 55 may move toward the exhaust space 55 along an internal path of the exhaust unit 120. The gas moving along the internal path of the exhaust unit 120 may be exhausted through the opening OP and the exhaust port 130.

The exhaust port 130 may include a channel extending in a first direction toward the exhaust unit 120 and a second direction different from the first direction. In an example embodiment, the exhaust port 130 may have an L-shaped or L-like shaped channel formed therein, so that gas in the exhaust space 55 may flow laterally toward the exhaust port 130 and may be exhausted downward. In another example, the gas in the exhaust space 55 may flow laterally and may be exhausted upward. The gas exhausted through the exhaust port 130 may be transferred to an exhaust pump (not shown) through the exhaust line 18, and the gas may be exhausted to the outside by the exhaust pump (not shown).

The flow control unit 140 may be disposed in an exhaust channel (a channel from the space inside the exhaust unit 120 to the exhaust port 130). For example, the flow control unit 140 may be in the exhaust unit 120. The flow control unit 140 may be in a space between the gap E and the opening OP.

The flow control unit 140 may be arranged adjacent to the exhaust port 130 as shown in FIG. 1 . The arrangement of the flow control unit 140 serves as a physical barrier to gas moving toward the exhaust port 130. Therefore, exhaust deflection in the exhaust space 55 (that is, a phenomenon that a gas flow is concentrated in the exhaust port 130) may be mitigated.

In some embodiments, the flow control unit 140 may include at least one through hole TH. Exhaust resistance of the gas exhausted toward the exhaust port 130 may be controlled by using the through hole TH. Furthermore, as described above, the exhaust resistance of the exhausted gas may also be controlled by a distance between the flow control unit 140 and the connecting wall C (e.g., distance a) and/or a distance between the flow control unit 140 and the external wall O (e.g., distance b).

The flow control unit 140 may be movable on a guide unit GU. For this purpose, for example, the flow control unit 140 may include a body 141, a coupling portion 143, and a moving portion 145.

The body 141 is a component in the exhaust space 55 and may be configured to affect flows of first gas supplied from a reaction space 11 toward the exhaust space 55 and second gas moving around the exhaust space 55. For example, through the body 141, the flow control unit 140 may prevent the flow of gas (e.g., the second gas) in the exhaust space 55 from concentrating at the exhaust port 130.

The body 141 may be arranged to occupy at least a portion of the exhaust space 55. For example, the body 141 may have a shape protruding from the guide unit GU on the support TLD. In some embodiments, the body 141 may extend in a circumferential direction of the exhaust space 55. In a further embodiment, the body 141 may include at least one through hole TH. Gas supplied from the reaction space 51 may be moved to the opening OP and the exhaust port 130 through the through hole TH.

The coupling portion 143 may provide coupling between the flow control unit 140 and the guide unit GU. For example, the guide unit GU on the support TLD may include a groove, and the coupling portion 143 may be inserted into the groove. In some embodiments, the coupling portion 143 may have a shape corresponding to the groove. For example, the groove of the guide unit GU may have a T shape, and the coupling portion 143 may also have a T shape to correspond to the groove.

The moving portion 145 may be between the coupling portion 143 and the guide unit GU. The moving portion 145 may be configured to reduce frictional force between the coupling portion 143 and the guide unit GU. For example, the moving portion 145 may include a rotatable component such as a bearing or a wheel. The moving portion 145 may move the flow control unit 140 along a circumference of the exhaust space 55 on the guide unit GU.

It should be noted that although the coupling portion 143 and the moving portion 145 are shown as components of the flow control unit 140 in the drawings, the inventive concept is not limited thereto. The coupling portion 143 and the moving portion 145 may be components of the guide unit GU. For example, in some embodiments, the guide unit GU may include an engagement portion protruding in a certain shape, and the flow control unit 140 may include a groove having a shape corresponding to the coupling portion. In other words, at least one of the flow control unit 140 and the guide unit GU may include a groove for preventing a separation between the flow control unit 140 and the guide unit GU.

In an alternative embodiment, the support TLD and the guide unit GU may be implemented as an integral structure. In another embodiment, the support TLD and the guide unit GU may be implemented as separate structures. In this case, the aforementioned separation preventing groove will be implemented in at least one of the flow control unit 140 and the support TLD.

The through hole TH of the body 141 may extend toward the exhaust port 130. In the case of the body 141 having no through hole TH, a turbulence flow may occur while gas in the reaction space 51 is exhausted to the exhaust port 130. The through hole TH formed in the body 141 may mitigate the generation of such a turbulence flow.

The through hole TH may be formed to have various shapes. For example, the through hole TH may be arranged in a double layer. The body 141 of the flow control unit 140 may include a first surface facing the exhaust port 130 and a second surface different from the first surface, and the through hole TH may extend through the first surface and the second surface.

In some embodiments, the second surface may be a surface facing the reaction space 51. In this case, the through hole TH may extend in a direction from the reaction space 51 toward the exhaust port 130. In another embodiment, the second surface may be a surface facing a direction extending along the exhaust space 55. In this case, the through hole TH may include a first portion extending toward the exhaust port 130 and a second portion extending in the extending direction of the exhaust space 55.

In some examples, the through hole TH may be formed to have the same cross-sectional area (for example, a cylindrical shape) as a whole. In another example, the through hole TH may be partially formed to have different cross-sectional areas. That is, the cross-sectional area of a first portion of the through hole TH may be different from the cross-sectional area of a second portion of the through hole TH. For example, as shown in FIG. 2 , the cross-sectional area of a portion formed on a first surface of the through hole TH toward the exhaust port 130 may be greater than the cross-sectional area of a portion formed on a second surface of the through hole TH toward the reaction space 51.

In another example, the cross-sectional area of both end portions of the through hole TH may be greater than the cross-sectional area of a center portion of the through hole TH, and thus the through hole TH of a ribbon cross-sectional shape may be formed. In another example, the cross-sectional area of the both end portions of the through hole TH may be less than the cross-sectional area of the center portion of the through hole TH, and thus the through hole TH of a diamond cross-sectional shape may be formed.

A shape of the through hole TH functions as a factor controlling exhaust resistance. In other words, the exhaust resistance of gas toward the flow control unit 140 may be adjusted by adjusting the shape of an inlet portion and/or the center portion of the through hole TH.

The force applying unit 160 may be configured to generate force for moving the flow control unit 140. The force applying unit 160 may be apart from the flow control unit 140. For example, the force applying unit 160 may be in the partition wall 100 at the bottom of the flow control unit 140. Therefore, contact between the gas in the reaction space 51 and the exhaust space 55 and the force applying unit 160 may be prevented.

The force applying unit 160 may be received in a receiving unit 170 disposed in the partition wall 100. The receiving unit 170 may be a structure integrated with the partition wall 100, or may be a separate structure that can be coupled with the partition wall 100. Maintenance of the force applying unit 160 may be made easier by implementing the receiving unit 170 as a separate structure from the partition wall 100. For example, for maintenance of the force applying unit 160, the processing unit 110 as the first lid and the exhaust unit 120 as the second lid may be lifted and the receiving unit 170 may be separated from the partition wall 100.

In a further embodiment, a rolling unit 165 may be between the force applying unit 160 and the receiving unit 170. The rolling unit 165 may be configured to be able to roll in an extending direction of the guide unit GU (i.e., that circumferential direction of the exhaust space 55). For example, the rolling unit 165 may include bearings and/or wheels having a degree of freedom 1. The rolling unit 165 may be coupled to the force applying unit 160. In another embodiment, the rolling unit 165 may be coupled to the receiving unit. In yet another embodiment, the rolling unit 165 may be coupled to an extension 163.

The force applying unit 160 may generate magnetic force to move the flow control unit 140. For example, the flow control unit 140 may include a metallic material, and the force applying unit 160 may include a magnetic force applying unit 161 that applies magnetic force to the metallic material. By the magnetic force generated by the magnetic force applying unit 161, the flow control unit 140 may move together in a direction in which the force applying unit 160 moves.

In some embodiments, when the force applying unit 160 is implemented as a magnetic force applying unit 161 that applies magnetic force, the magnetic force applying unit 161 may include an electromagnet functioning as a magnet only when a current is applied. In this case, the substrate processing apparatus may further include a controller (not shown) configured to control the electromagnet.

In a further embodiment, the controller may be configured to supply a current to the electromagnet during maintenance of the substrate processing apparatus. Further, the controller may be configured to interrupt current supply to the electromagnet during processing of the substrate processing apparatus. Thus, an influence of the force applying unit 160 during the processing (e.g., a magnetic field applied to an exhaust space) may be blocked.

For example, during the maintenance of the substrate processing apparatus, an operator may move the extension 163 coupled with the magnetic force applying unit 161. Since the magnetic force applying unit 161 implemented by the electromagnet during the maintenance generates magnetic force, the magnetic force applying unit 161 and the flow control unit 140 fastened by the magnetic force may move together by the movement of the extension 163.

When a process such as vapor deposition and/or etching is performed on a thin film, a profile of the thin film may be shifted to one side of a substrate without being symmetrical with respect to a center of the substrate. This non-uniformity of the thin film may occur particularly when the exhaust port 130 is disposed asymmetrically.

For example, in the case of the substrate processing apparatus shown in FIG. 1 , each of the reactors R1 a, R1 b, R2 a, and R2 b has only one exhaust port 130, so that the substrate processing apparatus has an asymmetric exhaust structure. Due to the asymmetric exhaust structure, a processed thin film in each substrate may have an asymmetrical shape with respect to the center of the substrate. In particular, when a substrate having a complicated concave-convex structure on its surface, such as a pattern structure, is processed, the characteristics of thin films deposited on respective portions of the substrate may become uneven.

According to embodiments of the inventive concept, a flow control unit is provided as a physical unit capable of controlling the exhaust of gas in an exhaust duct (e.g., an exhaust unit) of a reactor. The flow control unit functions as a barrier against the gas concentrated in the exhaust port, whereby exhaust deflection may be mitigated. Further, a through hole is formed in the flow control unit, so that exhaust velocity and exhaust resistance may be controlled while minimizing turbulence flow generation around the flow control unit. Therefore, the non-uniform property of the thin film due to the asymmetric exhaust structure may be improved.

FIGS. 3 to 5 are views of a substrate processing apparatus according to some embodiments of the inventive concept. In more detail, FIG. 3 shows a portion (e.g., exhaust lines 18 and 28, a connection port CP, an external path EC connected to an external pump, etc.) of the substrate processing apparatus excluding a lid (i.e., a processing unit and an exhaust unit) and an exhaust port. FIG. 4 is a view of the portion of the substrate processing apparatus of FIG. 3 viewed from a first direction, and FIG. 5 is a view of the portion of the substrate processing apparatus of FIG. 3 viewed from a second direction. The substrate processing apparatus according to the embodiments may be a variation of the above-described substrate processing apparatus according to the embodiments. Hereinafter, repeated descriptions of the embodiments will not be given herein.

Referring to FIGS. 3 to 5 , exhaust lines 18 and 28 are formed in the partition wall 100. The exhaust lines 18 and 28 are connected to the external path EC through the connection port CP and the external path EC is connected to a main exhaust path 211. Therefore, gas in a reaction space is exhausted to an exhaust pump EP via exhaust ports 130 and 230, the exhaust lines 18 and 28, the external path EC, and the main exhaust path 211.

As shown in FIG. 4 , two reactors R1 a and R1 b in a first direction use internal exhaust lines 18 a and 18 b, and the remaining two reactors in a direction opposite to the first direction use other internal exhaust lines 28 a and 28 b. The two internal exhaust lines 18 and 28 are connected to the external path EC through connection ports CP and CP′, respectively. The external path EC may be implemented in one configuration or in a plurality of configurations.

FIG. 4 shows that the four reactors use at least one external path EC, the main exhaust path 211, and the exhaust pump EP. An isolation valve 210 may be added to the main exhaust path 211. Therefore, the exhaust pump EP may be protected from the outside atmosphere by the isolation valve 210 during a maintenance period. Further, a pressure control valve (e.g., a throttle valve) may be added to the main exhaust path 211. The outer path EC may be fixed so as not to move in close contact with a lower surface of the partition wall 100 of an outer chamber. In an alternative embodiment, the two internal exhaust lines 18 and 28 may be connected to each other within a bottom wall of the partition wall 100 of the outer chamber and directly connected to the main exhaust path 211, without the external path EC.

Referring again to FIG. 3 , the first external path EC connected to the first connection port CP may extend below the partition wall 100 toward a first corner portion C1 of the outer chamber. In addition, the second external path EC′ connected to the second connection port CP′ (not shown) may extend below the partition wall 100 toward a second corner portion C2 of the outer chamber. The exhaust pump EP may be arranged on one surface of the substrate processing apparatus, for example, corresponding to the center between the first corner portion C1 and the second corner portion C2. The first external path EC may extend from the portion extending to the first corner portion C1 to the exhaust pump EP. Also, the second external path EC′ may extend from the portion extending to the second corner portion C2 to the exhaust pump EP.

FIG. 6 is a view of a substrate processing apparatus according to some embodiments of the inventive concept. The substrate processing apparatus according to the embodiments may be a variation of the above-described substrate processing apparatus according to the embodiments. Hereinafter, repeated descriptions of the embodiments will not be given herein.

Referring to FIG. 6 , the substrate processing apparatus may include a processing unit 14, an exhaust unit 4, and a flow control unit 15. The processing unit 14 may include members that perform appropriate functions depending on a function of the substrate processing apparatus as described above. The exhaust unit 4 may be connected to a reaction space below the processing unit 14 so that gas in the reaction space may be exhausted to an exhaust port (i.e., a pumping port) through an exhaust space of the exhaust unit 4.

As shown in FIG. 6 , the exhaust port (i.e., the pumping port) is located on the right side of the exhaust unit 4. Therefore, when exhausting the gas in the reaction space, more gas may be exhausted in a direction of the exhaust port. Due to such concentration of the exhaust gas, the thickness uniformity of a resulting thin film may be deteriorated and a film profile may be thick in one side.

In order to overcome such a problem, the flow control unit 15 may be provided in the exhaust space 6 of the exhaust unit 4. The flow control unit 15 may be disposed in the direction of the exhaust port to directly control a gas flow toward the exhaust port. Thus, the anisotropy of gas exhausted from the reaction space may be lowered and more uniform exhaust may be achieved. In other words, a gas flow exhausted toward the exhaust unit 4 around a substrate may be more symmetrical.

In some embodiments, the flow control unit 15 may include at least one through hole. The through hole may be configured to control exhaust velocity and exhaust resistance while minimizing turbulence flow generation around the flow control unit 15. For this purpose, the through hole may be configured to have various shapes as shown in FIG. 7 .

In FIG. 6 , a heating block and a substrate supporting unit (e.g., a susceptor) on which the substrate is placed are disposed below the processing unit 14, but are omitted in the disclosure for the sake of understanding. A flow control ring (FCR) 5 may include an outer flow control ring disposed to surround the heating block and an inner flow control ring disposed in the exhaust space 6. The gas flow is shown by arrows. The gas in the reaction space may be exhausted to the exhaust space 6 through a gap between the exhaust unit 4 and the flow control ring 5, as described above.

The flow control unit 15 may be mechanically fixed to the flow control ring 5, and more particularly to the inner flow control ring. In some embodiments, the flow control unit 15 may be designed to move on the inner flow control ring in the exhaust space 6.

The optimum arrangement of the flow control unit 15 on the flow control ring 5 may be determined depending on the type of process, the flow rate of gas supplied to the reaction space, and the shape and arrangement of through holes in the flow control unit 15. In this case, it is an important process variable to give the flow control unit 15 mobility.

Although not shown in the drawings, in order to achieve the mobility of the flow control unit 15, the substrate processing apparatus may further include a force applying unit configured to generate force for moving the flow control unit 15. The force applying unit may be spaced apart from the flow control unit 15.

FIG. 7 shows various forms of the flow control unit 15 and a through hole 17 included in the flow control unit 15. The flow control unit 15 may have a curved shape corresponding to the exhaust space 6. Gas in the exhaust space 6 may be exhausted to the exhaust port 3 through the through hole 17. It is possible to more precisely control exhaust velocity and exhaust pattern of gas passing through the through hole 17 and exhausted to the exhaust port 3 by forming the through hole 17, and consequently to further improve the symmetry of gas exhaust in the reaction space.

The through hole 17 may be provided in various forms. For example, as shown in FIGS. 7A and 7B, the through hole 17 may be cylindrical or may have a conical shape with different widths of the inlet and the outlet, or a dumbbell shape with a narrow middle. Further, as shown in FIG. 7C, the through hole 17 may be arranged in a double-layer. In addition, as shown in FIG. 7D, the through hole 17 may include a first portion P1 extending toward the exhaust port and a second portion P2 extending in the extending direction of the exhaust space 55. FIG. 7E shows a first portion P1′ extending toward the exhaust port, a second portion P2′ extending in the extension direction of the exhaust space 55, and a third portion P3′ extending toward the reaction space.

FIGS. 8 and 9 are views of a substrate processing apparatus according to some embodiments. FIG. 8 is a plan view of the substrate processing apparatus, and FIG. 2 is a cross-sectional view taken along line A-A′ of FIG. 8 . The substrate processing apparatus according to the embodiments may be a variation of the substrate processing apparatus according to the above-described embodiments. Hereinafter, repeated descriptions of the embodiments will not be given herein.

Referring to FIGS. 8 and 9 , the substrate processing apparatus may include an exhaust unit 4 connected to a reaction space, an exhaust port including the exhaust port 3, the flow control unit 15 in the exhaust unit 4, and a magnet portion 21 configured to generate force for moving the flow control unit 15. As described above, the flow control unit 15 may include at least one through hole.

A substrate supporting unit including the heating block 16 may be moved up and down by the moving portion 19. For example, when a substrate is loaded and unloaded, the heating block 16 may move up and down by the moving portion 19 to form a reaction space. The bellows 18 may also be moved up and down when the moving portion 19 moves, whereby the up and down movement of the heating block 16 may be promoted.

The flow control unit 15 may be between the exhaust unit 4 and the exhaust port 3. In more detail, the flow control unit 15 may be in front of a path connecting the exhaust unit 4 and the exhaust outlet 3.

A protrusion 20 may be below the exhaust unit 4 and the exhaust outlet 3 of a chamber 1. The protrusion 20 may be disposed in a chamber space corresponding to the exhaust unit 4 and the exhaust outlet 3 in a vertical direction. The magnet portion 21 and a magnet support 22 for supporting the magnet portion 21 may be arranged in the protrusion 20. Horizontal movement of the magnet support 22 may be controlled by a controller 24.

A roller 23 may be between the magnet support 22 and the chamber 1 and between the magnet support 22 and the controller 24. The roller 23 may reduce frictional force between the magnet support 22 and the chamber 1 and between the magnet support 22 and the controller 24 thereby promoting horizontal movement of the magnet support 22.

In some embodiments, the magnet support 22 may be implemented as an concave-convex structure through a wall of the chamber 1. A position of the magnet support 22 may be supported by the concave-convex structure, and as a result, separation of the magnet support 22 may be prevented.

The flow control unit 15 is made of a metal material and is therefore movable in a horizontal direction by the magnet portion 21. The controller 24 may control the horizontal movement of the magnet support 22 and provide a moving orbit of the magnet support 22. For example, the flow control unit 15 may move together in the direction of movement of the magnet support 22 by magnetic force of the magnet portion 21 when the magnet support 22 moves horizontally. Movement speed of the flow control unit 15 may be determined according to a distance d between the flow control unit 15 and the magnet portion 21. The distance d may be experimentally determined within the range of the magnetic force.

The magnet portion 21 may be implemented as an electromagnet in addition to a permanent magnet. That is, by implementing the magnet portion 21 with an electromagnet generating magnetic force only when a current is supplied, an influence of a metal precursor supplied during a metal thin film process on the flow control unit 15 may be minimized. For example, a current is supplied to generate magnetic force to correct a position of the flow control unit 15 during the maintenance period of a chamber. However, during the process, an influence of the metal thin film process on the flow control unit 15 may be prevented by stopping the current supply and not generating the magnetic force.

According to embodiments of the inventive concept, during processing such as etching, ashing, and cleaning in a multi-reactor chamber, a device is provided for proceeding a uniform process on a substrate. A device for overcoming non-uniformity of the process due to exhaust deflection, in particular, is provided.

According to embodiments of the inventive concept, it is possible to overcome the exhaust deflection by disposing an exhaust flow control unit near the exhaust port. In other words, in a multi-reactor chamber equipped with a plurality of reactors, exhaust asymmetry due to the biased arrangement of an exhaust structure may be overcome and a thin film on a substrate may be processed uniformly.

FIGS. 10 to 12 are views of a substrate processing apparatus according to some embodiments of the inventive concept. The substrate processing apparatus according to the embodiments may be a variation of the above-described substrate processing apparatus according to the embodiments. Hereinafter, repeated descriptions of the embodiments will not be given herein.

In FIG. 10 , a groove 25 is formed in the flow control ring 5 in contact with the flow control unit 15 and the roller 23 is added to a lower portion of the flow control unit 15. The roller 23 may be a portion of the flow control unit 15. The groove 25 may serve as a track which becomes an orbit through which the flow control unit 15 moves.

Referring to FIG. 10 together with FIG. 9 , the flow control unit 15 may move along the groove 25 as the magnet portion 21 moves. Frictional force between the flow control ring 5 and the flow control unit 15 may be minimized by the roller 23 so that the movement of the flow control unit 15 may be promoted.

Further, by providing a moving track, that is, the groove 25, collision between the flow control unit 15 and the exhaust unit 4 in the exhaust space 6 may be prevented. The distances a and b between the exhaust unit 4 and the flow control unit 15 may be kept constant, for example, when the flow control unit 15 is moved.

In some embodiments, at least one of the flow control unit 15 and the flow control ring 5 may be provided with a recess or a protrusion (e.g., a protrusion 26), as shown in FIG. 11 . The recess or the protrusion may provide a moving orbit of the flow control unit 15 in an exhaust space 60. Therefore, a collision of the flow control unit 15 and the exhaust unit 4 may be prevented, and the movement of the flow control unit 15 may be easily achieved.

FIG. 12 shows the entire orbit of the groove 25 provided in the exhaust space 6. FIG. 12 shows that the groove 25 is formed as a guide unit into which the flow control unit 15 is inserted over the entire exhaust space 6, but the disclosure is not limited thereto. For example, the groove 25 may be formed only in a portion of the exhaust space 6.

Further, in some embodiments, as shown in FIG. 12 , the moving track, the guide unit, or the groove 25 or the protrusion 26 may be formed only in a region where the exhaust outlet 3 exists, that is, the exhaust space 6 of the B-B′ region constituting angle α. The flow control unit 15 may be configured to be movable only in a partially formed moving track area.

FIG. 13 is a view of a substrate processing apparatus according to some embodiments of the inventive concept. The substrate processing apparatus according to some embodiments may be a variation of the substrate processing apparatus according to the above-described embodiments. Hereinafter, repeated descriptions of the embodiments will not be given herein.

FIG. 13 shows a solid form of a portion of the magnet portion 21 and the magnet support 22 of the substrate processing apparatus. Although the magnet portion 21 and the magnet support 22 extend in a linear direction as a three-dimensional shape in FIG. 13 , the magnet portion 21 and the magnet support 22 may have a curved shape corresponding to the exhaust space 6 and the flow control unit 15 of a reactor. In other words, the magnet portion 21 and the magnet support 22 may extend to have a certain curvature (e.g., to have the same curvature as the curvature of an exhaust unit).

As described above, the magnet portion 21 may be a permanent magnet or an electromagnet. One surface of the magnet support 22 which penetrates a chamber may form a concave-convex portion, and the concave-convex portion may be inserted into the chamber. Separation of the magnet support 22 may be prevented by the concave-convex structure.

The roller 23 may be mounted on a surface on which a chamber wall and a controller are in contact with each other. The magnet support 22 may be easily moved by the roller 23. As shown in FIG. 13 , the roller 23 may be realized in the form of a wheel which may roll in one direction. For example, the magnet support 22 is provided with a wheel shaft fixing portion, and a wheel shaft may pass through a center portion of the wheel.

The flow control unit 15 may move in the exhaust space 6 by magnetic force generated by the magnet portion 21. The magnet support 22 may move along a track formed in a lower wall of the chamber corresponding to the exhaust space 6 of the reactor.

A track through which the magnet portion 21 and the magnet support 22 may move may be formed over the entire circumference of the chamber. In addition, the magnet portion 21 and the magnet support 22 may be configured to be movable only in a partially formed track region. For example, as shown in FIG. 12 , the track may be formed only in a region where the exhaust outlet 3 exists, that is, in a circumferential region of the chamber corresponding to the exhaust space 6 of the B-B′ region constituting angle α. In other words, a moving section of the magnet portion 21 and the magnet support 22 may be limited to an area around the exhaust outlet 3.

It should be understood that embodiments described herein should be considered in a descriptive sense only and not for purposes of limitation. Descriptions of features or aspects within each embodiment should typically be considered as available for other similar features or aspects in other embodiments. While one or more embodiments have been described with reference to the figures, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the disclosure as defined by the following claims. 

What is claimed is:
 1. A substrate processing apparatus comprising: a substrate supporting unit; a processing unit on the substrate supporting unit; an exhaust unit connected to a reaction space between the substrate supporting unit and the processing unit; an exhaust port connected to at least a portion of the exhaust unit; a flow control unit disposed in an exhaust channel from a space inside the exhaust unit to the exhaust port; a force applying unit configured to generate a force for moving the flow control unit; a receiving unit for receiving the force applying unit; and a rolling unit between the force applying unit and the receiving unit, wherein, the force for moving the flow control unit is a magnetic force, and the force applying unit comprises a magnetic force applying unit.
 2. The substrate processing apparatus of claim 1, wherein the flow control unit is adjacent to the exhaust port.
 3. The substrate processing apparatus of claim 1, wherein the exhaust unit extends to form an exhaust space surrounding the reaction space, and the exhaust port is disposed to communicate with a portion of the exhaust space.
 4. The substrate processing apparatus of claim 3, wherein the flow control unit is configured to prevent a gas flow in the exhaust space from concentrating at the exhaust port.
 5. The substrate processing apparatus of claim 1, further including: a support configured to support the processing unit and the exhaust unit; and a guide unit on the support, wherein the flow control unit is configured to be movable on the guide unit.
 6. The substrate processing apparatus of claim 5, wherein the support and the guide unit are implemented as an integral structure.
 7. The substrate processing apparatus of claim 5, wherein at least one of the flow control unit and the guide unit comprises a groove or a recess portion for preventing a separation between the flow control unit and the guide unit.
 8. The substrate processing apparatus of claim 1, wherein the exhaust unit further comprises: a boundary wall defining a side portion of the reaction space; an external wall parallel to the boundary wall; and a connecting wall extending to connect the boundary wall to the external wall, wherein the connecting wall provides a contact surface between the exhaust unit and the processing unit.
 9. The substrate processing apparatus of claim 1, wherein the flow control unit comprises at least one through hole, and at least a portion of the through hole extends towards the exhaust port.
 10. The substrate processing apparatus of claim 9, wherein the through hole is arranged in a double-layer.
 11. The substrate processing apparatus of claim 9, wherein the flow control unit comprises a first surface facing the exhaust port and a second surface different from the first surface, and the through hole extends through the first surface and the second surface.
 12. The substrate processing apparatus of claim 9, wherein a cross-sectional area of a first portion of the through hole is different from a cross-sectional area of a second portion of the through hole.
 13. The substrate processing apparatus of claim 1, wherein the magnetic force applying unit comprises an electromagnet, and the substrate processing apparatus further comprises a controller configured to control the electromagnet.
 14. The substrate processing apparatus of claim 13, the controller is configured to supply a current to the electromagnet during a maintenance operation of the substrate processing apparatus, and to stop the supply of current to the electromagnet during a processing operation of the substrate processing apparatus.
 15. A substrate processing apparatus comprising: a processing unit; an exhaust unit connected to a reaction space below the processing unit; a flow control unit disposed in the exhaust unit and comprising at least one through hole; and a force applying unit disposed apart from the flow control unit and configured to generate a force for moving the flow control unit, wherein, the force for moving the flow control unit is a magnetic force, and the force applying unit comprises a magnetic force applying unit.
 16. A substrate processing apparatus comprising: an exhaust unit connected to a reaction space; an exhaust port connected to at least a portion of the exhaust unit; a flow control unit disposed in the exhaust unit and comprising at least one through hole; and a force applying unit configured to generate a force for moving the flow control unit, wherein, the force for moving the flow control unit is a magnetic force, and the force applying unit comprises a magnetic force applying unit. 